| PART |
Description |
Maker |
| TS1GJFV60 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJF110 |
1GB USB2.0 JetFlash??10
|
Transcend Information. Inc.
|
| TS1GJF110 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJFV30 |
1GB USB2.0 JetFlash V30
|
Transcend Information. Inc.
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
| TS8GJFV15 |
8GB USB2.0 JetFlash垄芒V15
8GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| TS2GJFV15 |
2GB USB2.0 JetFlash垄芒V15
2GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| TS512MJFV60 |
512MB USB2.0 JetFlash?/a>
512MB USB2.0 JetFlash垄芒
|
Transcend Information. Inc.
|
| TS8GJF2A |
8GB USB2.0 JetFlash垄莽
8GB USB2.0 JetFlash?
|
Transcend Information. Inc.
|
| TS4GJF2A |
4GB USB2.0 JetFlash垄莽2A
4GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
| HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
